NTNS3190NZ Advance Information Small Signal MOSFET 20 V, 230 mA, Single NChannel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package Features NTNS3190NZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 20 V DS Gate-to-Source Leakage Current I V = 0 V, V = 8.0 V 2.0 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Drain-to-Source On Resistance R V = 4.5 V, I = 100 mA 0.75 1.4 DS(on) GS D V = 2.5 V, I = 50 mA 1.0 1.9 GS D V = 1.8 V, I = 20 mA 1.3 2.2 GS D V = 1.5 V, I = 10 mA 1.6 4.3 GS D SourceDrain Diode Voltage V V = 0 V, I = 10 mA 0.7 1.0 V SD GS S CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 15.8 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 4.6 OSS V = 15 V DS Reverse Transfer Capacitance C 3.3 RSS SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time t 20 ns d(ON) Rise Time t 45 r V = 4.5 V, V = 15 V, GS DD I = 200 mA, R = 2 Turn-Off Delay Time t D G 240 d(OFF) Fall Time t 140 f 3. Switching characteristics are independent of operating junction temperatures. TYPICAL CHARACTERISTICS 1.7 0.85 V = 1.8 V GS I = 250 A 1.6 D I = 20 mA D 1.5 0.75 1.4 1.3 0.65 1.2 1.1 0.55 1.0 0.9 0.45 0.8 0.7 0.35 50 25 0 25 50 75 100 125 150 50 25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (C) J T , JUNCTION TEMPERATURE (C) J Figure 1. OnResistance Variation with Figure 2. Threshold Voltage Temperature