X-On Electronics has gained recognition as a prominent supplier of NTNS3190NZT5G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTNS3190NZT5G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTNS3190NZT5G ON Semiconductor

NTNS3190NZT5G electronic component of ON Semiconductor
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Part No.NTNS3190NZT5G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NFET XLLGA3 20V 230MA 1.4
Datasheet: NTNS3190NZT5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.2124 ea
Line Total: USD 1699.2 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 0.2431
24000 : USD 0.2133

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 0.217

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1701
Multiples : 1701
1701 : USD 0.2551

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 0.2124
48000 : USD 0.2053

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTNS3190NZT5G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTNS3190NZT5G and other electronic components in the MOSFETs category and beyond.

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NTNS3190NZ Advance Information Small Signal MOSFET 20 V, 230 mA, Single NChannel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package Features NTNS3190NZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 20 V DS Gate-to-Source Leakage Current I V = 0 V, V = 8.0 V 2.0 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Drain-to-Source On Resistance R V = 4.5 V, I = 100 mA 0.75 1.4 DS(on) GS D V = 2.5 V, I = 50 mA 1.0 1.9 GS D V = 1.8 V, I = 20 mA 1.3 2.2 GS D V = 1.5 V, I = 10 mA 1.6 4.3 GS D SourceDrain Diode Voltage V V = 0 V, I = 10 mA 0.7 1.0 V SD GS S CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 15.8 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 4.6 OSS V = 15 V DS Reverse Transfer Capacitance C 3.3 RSS SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time t 20 ns d(ON) Rise Time t 45 r V = 4.5 V, V = 15 V, GS DD I = 200 mA, R = 2 Turn-Off Delay Time t D G 240 d(OFF) Fall Time t 140 f 3. Switching characteristics are independent of operating junction temperatures. TYPICAL CHARACTERISTICS 1.7 0.85 V = 1.8 V GS I = 250 A 1.6 D I = 20 mA D 1.5 0.75 1.4 1.3 0.65 1.2 1.1 0.55 1.0 0.9 0.45 0.8 0.7 0.35 50 25 0 25 50 75 100 125 150 50 25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (C) J T , JUNCTION TEMPERATURE (C) J Figure 1. OnResistance Variation with Figure 2. Threshold Voltage Temperature

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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