BSS670S2L OptiMOS Buck converter series Product Summary Feature V 55 V DS N-Channel R 650 m DS(on) Enhancement mode I 0.54 A D Logic Level 1) PG-SOT 23 Avalanche rated Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Drain pin 3 Gate pin1 Type Package Tape and Reel Marking Source BSS670S2L PG-SOT 23 BSs H6327: 3000 pcs/reel pin 2 Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.54 A T =70C 0.43 A 2.2 Pulsed drain current I D puls T =25C A 1) Avalanche energy, single pulse I = 0.54 A, R = 25 E 8.1 mJ D G AS Gate source voltage V 20 V GS Power dissipation P 0.36 W tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM 1) Valid from devices with date code 0604 onwards Rev. 2. 6 Page 1 2012-03-29BSS670S2L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 290 K/W Thermal resistance, junction - soldering point R thJS (Pin 3) SMD version, device on PCB: R thJA min. footprint - - 350 2 2) 6 cm cooling area - - 300 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics V 55 - - V Drain-source breakdown voltage (BR)DSS V =0, I =1mA GS D 1.2 1.6 2 Gate threshold voltage, V = V V GS DS GS(th) I =2.7A D A Zero gate voltage drain current I DSS V =55V, V =0, T =25C - 0.01 0.1 DS GS j V =55V, V =0, T =150C - 1 10 DS GS j - 1 100 nA Gate-source leakage current I GSS V =20V, V =0V GS DS - 430 825 Drain-source on-state resistance R m DS(on) V =4.5V, I =270mA GS D - 346 650 Drain-source on-state resistance R DS(on) V =10V, I =270mA GS D 2) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2. 6 Page 2 2012-03-29