NTMS7N03R2G MOSFET Power, N-Channel, SOIC-8 7 A, 30 V Features www.onsemi.com Ultra Low R DS(on) 7 AMPERES Higher Efficiency Extending Battery Life Logic Level Gate Drive 30 VOLTS Miniature SOIC8 Surface Mount Package R = 23 m DS(on) Avalanche Energy Specified I Specified at Elevated Temperature DSS NChannel This is a PbFree Device D Typical Applications DCDC Converters G Power Management Motor Controls S Inductive Loads Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD MARKING in Many Applications DIAGRAM 8 SOIC8 E7N03 8 CASE 751 AYWW 1 STYLE 13 1 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) PIN ASSIGNMENT NC Drain 1 8 Source 2 7 Drain Source 3 6 Drain Gate 4 5 Drain Top View ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 5 NTMS7N03R2/DNTMS7N03R2G MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit DraintoSource Voltage V 30 Vdc DSS DraintoGate Voltage (R = 1.0 M ) V 30 Vdc GS DGR GatetoSource Voltage Continuous V 20 Vdc GS Thermal Resistance, JunctiontoAmbient (Note 1) R 50 C/W JA Total Power Dissipation T = 25C P 2.5 W A D Drain Current Continuous T = 25C I 8.5 Adc A D I 6.8 Drain Current Continuous T = 70C A D I 25 Apk Drain Current Pulsed (Note 4) DM Thermal Resistance, JunctiontoAmbient (Note 2) R 85 C/W JA Total Power Dissipation T = 25C P 1.47 W A D Drain Current Continuous T = 25C I 6.5 Adc A D Drain Current Continuous T = 70C I 5.2 A D Drain Current Pulsed (Note 4) I 18 Apk DM Thermal Resistance, JunctiontoAmbient (Note 3) R 156 C/W JA Total Power Dissipation T = 25C P 0.8 W A D Drain Current Continuous T = 25C I 4.8 Adc A D Drain Current Continuous T = 70C I 3.8 A D Drain Current Pulsed (Note 4) I 14 Apk DM Operating and Storage Temperature Range T , T 55 to +150 C J stg Single Pulse DraintoSource Avalanche Energy Starting T = 25C E 288 mJ J AS (V = 30 Vdc, V = 10 Vdc, Peak DD GS I = 12 Apk, L = 4.0 mH, R = 25 ) L G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 2 in. Sq. FR4 PCB mounting, (2 oz. Cu 0.06 in. thick single sided), 10 Sec. Max. 2. 2 in. Sq. FR4 PCB mounting, (2 oz. Cu 0.06 in. thick single sided), t = steady state. 3. Minimum FR4 or G10 PCB, t = steady state. 4. Pulse test: Pulse Width = 300 s, Duty Cycle = 2%. ATTRIBUTES Characteristics Value ESD Protection Human Body Model Class 1E Machine Model Class A Charged Device Model Class 0 ORDERING INFORMATION Device Package Shipping NTMS7N03R2G SOIC8 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2