X-On Electronics has gained recognition as a prominent supplier of NTMS7N03R2G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMS7N03R2G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMS7N03R2G ON Semiconductor

NTMS7N03R2G electronic component of ON Semiconductor
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Part No.NTMS7N03R2G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 30 V 4.8A (Ta) 800mW (Ta) Surface Mount 8-SOIC
Datasheet: NTMS7N03R2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.3275 ea
Line Total: USD 818.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.3275
10000 : USD 0.3033
25000 : USD 0.2911

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.3504
5000 : USD 0.3154

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9126
10 : USD 0.7992
25 : USD 0.7507
100 : USD 0.545
500 : USD 0.4554
1000 : USD 0.3875

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 521
Multiples : 521
521 : USD 0.8084

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6658
10 : USD 0.5496
30 : USD 0.5009
100 : USD 0.4389
500 : USD 0.4108
1000 : USD 0.3939

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.1281
10 : USD 1.4299
100 : USD 1.0544
500 : USD 0.8923
1000 : USD 0.7261
2500 : USD 0.6834
5000 : USD 0.6595
10000 : USD 0.6366
25000 : USD 0.6137

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.2971

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.297

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
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We are delighted to provide the NTMS7N03R2G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMS7N03R2G and other electronic components in the MOSFETs category and beyond.

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NTMS7N03R2G MOSFET Power, N-Channel, SOIC-8 7 A, 30 V Features www.onsemi.com Ultra Low R DS(on) 7 AMPERES Higher Efficiency Extending Battery Life Logic Level Gate Drive 30 VOLTS Miniature SOIC8 Surface Mount Package R = 23 m DS(on) Avalanche Energy Specified I Specified at Elevated Temperature DSS NChannel This is a PbFree Device D Typical Applications DCDC Converters G Power Management Motor Controls S Inductive Loads Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD MARKING in Many Applications DIAGRAM 8 SOIC8 E7N03 8 CASE 751 AYWW 1 STYLE 13 1 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) PIN ASSIGNMENT NC Drain 1 8 Source 2 7 Drain Source 3 6 Drain Gate 4 5 Drain Top View ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 5 NTMS7N03R2/DNTMS7N03R2G MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit DraintoSource Voltage V 30 Vdc DSS DraintoGate Voltage (R = 1.0 M ) V 30 Vdc GS DGR GatetoSource Voltage Continuous V 20 Vdc GS Thermal Resistance, JunctiontoAmbient (Note 1) R 50 C/W JA Total Power Dissipation T = 25C P 2.5 W A D Drain Current Continuous T = 25C I 8.5 Adc A D I 6.8 Drain Current Continuous T = 70C A D I 25 Apk Drain Current Pulsed (Note 4) DM Thermal Resistance, JunctiontoAmbient (Note 2) R 85 C/W JA Total Power Dissipation T = 25C P 1.47 W A D Drain Current Continuous T = 25C I 6.5 Adc A D Drain Current Continuous T = 70C I 5.2 A D Drain Current Pulsed (Note 4) I 18 Apk DM Thermal Resistance, JunctiontoAmbient (Note 3) R 156 C/W JA Total Power Dissipation T = 25C P 0.8 W A D Drain Current Continuous T = 25C I 4.8 Adc A D Drain Current Continuous T = 70C I 3.8 A D Drain Current Pulsed (Note 4) I 14 Apk DM Operating and Storage Temperature Range T , T 55 to +150 C J stg Single Pulse DraintoSource Avalanche Energy Starting T = 25C E 288 mJ J AS (V = 30 Vdc, V = 10 Vdc, Peak DD GS I = 12 Apk, L = 4.0 mH, R = 25 ) L G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 2 in. Sq. FR4 PCB mounting, (2 oz. Cu 0.06 in. thick single sided), 10 Sec. Max. 2. 2 in. Sq. FR4 PCB mounting, (2 oz. Cu 0.06 in. thick single sided), t = steady state. 3. Minimum FR4 or G10 PCB, t = steady state. 4. Pulse test: Pulse Width = 300 s, Duty Cycle = 2%. ATTRIBUTES Characteristics Value ESD Protection Human Body Model Class 1E Machine Model Class A Charged Device Model Class 0 ORDERING INFORMATION Device Package Shipping NTMS7N03R2G SOIC8 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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