4920N AYWW NTMS4920N MOSFET Power, N-Channel, SO-8 30 V, 17 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 4.3 m 10 V 30 V 17 A Applications 5.7 m 4.5 V DCDC Converters Points of Loads NChannel Power Load Switch D Motor Controls MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 14.1 A D A S Current R (Note 1) State JA T = 70C 11.3 A MARKING DIAGRAM/ Power Dissipation R Steady T = 25C P 1.46 W JA A D (Note 1) State PIN ASSIGNMENT Continuous Drain Steady T = 25C I 10.6 A 18 D A Source Drain 1 Current R (Note 2) State JA T = 70C 8.5 A Source Drain SO8 Power Dissipation R T = 25C P 0.82 W Source Drain JA A D CASE 751 (Note 2) Gate Drain STYLE 12 Top View Continuous Drain Steady T = 25C I 17 A D A State Current R , t 10 s JA 4920N = Device Code T = 70C 13.6 (Note 1) A A = Assembly Location Power Dissipation Steady T = 25C P 2.12 W A D Y = Year R , t 10 s(Note 1) State JA WW = Work Week = PbFree Package Pulsed Drain Current T = 25C, t = 10 s I 136 A A p DM (Note: Microdot may be in either location) Operating Junction and Storage Temperature T , 55 to C J T 150 stg ORDERING INFORMATION Source Current (Body Diode) I 2.1 A S Single Pulse DraintoSource Avalanche Energy E 162 mJ Device Package Shipping AS (T = 25C, V = 30 V, V = 10 V, J DD GS NTMS4920NR2G SO8 2500/Tape & Reel I = 18 A , L = 1.0 mH, R = 25 ) L pk G (PbFree) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) For information on tape and reel specifications, including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specification device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoAmbient Steady State (Note 1) 85.5 C/W R JA JunctiontoAmbient t 10 s (Note 1) R 59 JA JunctiontoFoot (Drain) R 25 JF JunctiontoAmbient Steady State (Note 2) R 152 JA Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2019 Rev. 2 NTMS4920N/DNTMS4920N 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 2. Surfacemounted on FR4 board using the minimum recommended pad size. www.onsemi.com 2