4807N AYWW NTMS4807N MOSFET Power, N-Channel, SO-8 30 V, 14.8 A Features Low R to Minimize Conduction Losses DS(on) NTMS4807N 1. Surfacemounted on FR4 board using 1 in sq pad size. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 29 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, V = 24 V GS DS T = 100C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 3.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 6.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 14.8 A 5.1 6.1 m DS(on) GS D V = 4.5 V, I = 12 A 6.5 7.5 GS D Forward Transconductance g V = 1.5 V, I = 14.8 A 16 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE pF Input Capacitance C 2900 iss Output Capacitance C 562 V = 0 V, f = 1.0 MHz, V = 24 V oss GS DS Reverse Transfer Capacitance C 307 rss nC Total Gate Charge Q 24 G(TOT) Threshold Gate Charge Q 3.4 G(TH) V = 4.5 V, V = 15 V, I = 14.8 A GS DS D GatetoSource Charge Q 7.7 GS GatetoDrain Charge Q 10.4 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 14.8 A 46 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 14 ns d(on) Rise Time t 6.5 r V = 10 V, V = 15 V, GS DS I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 47 d(off) Fall Time t 17 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.0 V SD J V = 0 V, I = 2.9 A GS S T = 125C 0.58 J Reverse Recovery Time t 30 ns RR Charge Time t 15 a V = 0 V, d /d = 100 A/ s, GS IS t I = 2.9 A S Discharge Time t 15 b Reverse Recovery Charge Q 23 nC RR PACKAGE PARASITIC VALUES Source Inductance L T = 25C 0.66 nH S A Drain Inductance L T = 25C 0.20 nH D A Gate Inductance L T = 25C 1.5 nH G A Gate Resistance R T = 25C 0.9 1.4 G A 3. Pulse Test: pulse width = 300 s, duty cycle 2%.