X-On Electronics has gained recognition as a prominent supplier of NTP6412ANG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTP6412ANG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTP6412ANG ON Semiconductor

NTP6412ANG electronic component of ON Semiconductor
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Part No.NTP6412ANG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 100 V 58A (Tc) 167W (Tc) Through Hole TO-220
Datasheet: NTP6412ANG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.737 ea
Line Total: USD 2.74 
Availability - 733
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.2608
10 : USD 2.0082
30 : USD 1.8584
100 : USD 1.6379
500 : USD 1.5682
1000 : USD 1.5369

733
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.737
10 : USD 1.472
100 : USD 1.4605
500 : USD 1.3225
1000 : USD 1.196

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Configuration
Series
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTP6412ANG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTP6412ANG and other electronic components in the MOSFETs category and beyond.

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NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 m Features Low R DS(on) www.onsemi.com High Current Capability 100% Avalanche Tested I MAX D NVB Prefix for Automotive and Other Applications Requiring V R MAX (Note 1) (BR)DSS DS(ON) Unique Site and Control Change Requirements AECQ101 100 V 18.2 m 10 V 58 A Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant NChannel D MAXIMUM RATINGS (T = 25C Unless otherwise specified) J Parameter Symbol Value Unit DraintoSource Voltage V 100 V DSS G GatetoSource Voltage Continuous V 20 V GS Continuous Drain Cur- Steady T = 25C I 58 A D C rent R State JC S T = 100C 41 C 4 Power Dissipation Steady T = 25C P 167 W C D R State JC 4 Pulsed Drain Current t = 10 s I 240 A p DM 1 2 Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 3 Source Current (Body Diode) I 58 A 2 S TO220AB D PAK CASE 221A CASE 418B Single Pulse DraintoSource Avalanche E 300 mJ AS 1 STYLE 5 STYLE 2 Energy (V = 50 Vdc, V = 10 Vdc, DD GS 2 I = 44.7 A, L = 0.3 mH, R = 25 ) 3 L(pk) G Lead Temperature for Soldering T 260 C L MARKING DIAGRAM Purposes, 1/8 from Case for 10 Seconds & PIN ASSIGNMENT 4 THERMAL RESISTANCE RATINGS 4 Drain Drain Parameter Symbol Max Unit JunctiontoCase (Drain) Steady State R 0.9 C/W JC NTB JunctiontoAmbient (Note 1) R 33 JA NTP 6412ANG Stresses exceeding those listed in the Maximum Ratings table may damage the 6412ANG AYWW device. If any of these limits are exceeded, device functionality should not be AYWW assumed, damage may occur and reliability may be affected. 2 1. Surface mounted on FR4 board using 1 sq in pad size, 1 3 1 3 Drain (Cu Area 1.127 sq in 2 oz including traces). Gate Source Gate Source 2 6412AN = Specific Device Code Drain G = PbFree Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 2 NTB6412AN/DNTB6412AN, NTP6412AN, NVB6412AN ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage Temper- V /T 103 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 9.2 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I = 58 A 16.8 18.2 m DS(on) GS D V = 10 V, I = 20 A 15.6 18.2 GS D Forward Transconductance g V = 5 V, I = 20 A 31 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2700 3500 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 400 500 oss f = 1 MHz Reverse Transfer Capacitance C 150 rss Total Gate Charge Q 73 100 nC G(TOT) Threshold Gate Charge Q 2.5 G(TH) V = 10 V, V = 80 V, GS DS GatetoSource Charge Q 13.5 GS I = 58 A D GatetoDrain Charge Q 35 GD Plateau Voltage V 5.6 V GP Gate Resistance R 2.2 G SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS ns TurnOn Delay Time t 16 d(on) Rise Time t 140 r V = 10 V, V = 80 V, GS DD I = 58 A, R = 6.2 D G TurnOff Delay Time t 70 d(off) Fall Time t 126 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.96 1.3 V SD J I = 58 A S T = 125C 0.89 J Reverse Recovery Time t 85 ns rr Charge Time t 60 a V = 0 V, I = 58 A, GS S dI /dt = 100 A/ s SD Discharge Time t 25 b Reverse Recovery Charge Q 270 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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