NTMS4177PR2G ON Semiconductor

NTMS4177P MOSFET Power, P-Channel, SOIC-8 -30 V, -11.4 A Features NTMS4177P THERMAL RESISTANCE RATINGS Rating Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 82 JA JunctiontoAmbient t10 s (Note 3) R 50 JA C/W JunctiontoFOOT (Drain) R 20 JF JunctiontoAmbient Steady State (Note 4) R 148 JA 3. Surfacemounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)jk J Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage Tem- V /T 29 (BR)DSS J mV/C perature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 J DSS V = 0 V, GS A V = 24 V DS T = 85C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coeffi- V /T 6.0 GS(TH) J mV/C cient DraintoSource On Resistance R V = 10 V I = 11.4 A 10 12 DS(on) GS D m V = 4.5 V I = 9.1 A 15 19 GS D Forward Transconductance g V = 1.5 V I = 11.4 A 30 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 3100 ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 550 pF OSS V = 24 V DS Reverse Transfer Capacitance C 370 RSS Total Gate Charge Q 29 G(TOT) Threshold Gate Charge Q 3.3 G(TH) V = 4.5 V, V = 15 V, GS DS nC I = 11.4 A D GatetoSource Charge Q 10 GS GatetoDrain Charge Q 13 GD Total Gate Charge Q V = 10 V, V = 15 V, 55 G(TOT) GS DS nC I = 11.4 A, D Gate Resistance R 2.0 4.0 G SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 18 d(ON) Rise Time t 13 r V = 10 V, V = 15 V, GS DD ns I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 64 d(OFF) Fall Time t 36 f DRAINTOSOURCE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.73 1.0 V SD V = 0 V J GS I = 2.1 A D T = 125C 0.54 J Reverse Recovery Time t 34 RR ns Charge Time T 18 a V = 0 V, d /d = 100 A/ s, GS IS t I = 2.1 A S Discharge Time T 16 b Reverse Recovery Time Q 30 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.