X-On Electronics has gained recognition as a prominent supplier of NTMJS1D6N06CLTWG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMJS1D6N06CLTWG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMJS1D6N06CLTWG ON Semiconductor

NTMJS1D6N06CLTWG electronic component of ON Semiconductor
NTMJS1D6N06CLTWG ON Semiconductor
NTMJS1D6N06CLTWG MOSFETs
NTMJS1D6N06CLTWG  Semiconductors

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See Product Specifications
Part No. NTMJS1D6N06CLTWG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T6 60V LL LFPAK
Datasheet: NTMJS1D6N06CLTWG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.2715 ea
Line Total: USD 5.27 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 1
Multiples : 1
1 : USD 9.7225
10 : USD 8.42
100 : USD 6.8994
500 : USD 5.8732
1000 : USD 4.9533

0
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 1
Multiples : 1
1 : USD 9.7225
10 : USD 8.42
100 : USD 6.8994
500 : USD 5.8732
1000 : USD 4.9533

0
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 4.8799

0
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 5.2715
10 : USD 1.9666
100 : USD 1.6388
250 : USD 1.5951
500 : USD 1.4858
1000 : USD 1.3438
3000 : USD 1.3329

   
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We are delighted to provide the NTMJS1D6N06CLTWG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMJS1D6N06CLTWG and other electronic components in the MOSFETs category and beyond.

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NTMJS1D6N06CL Power MOSFET 60 V, 1.36 m , 250 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G LFPAK8 Package, Industry Standard These Devices are PbFree and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D 1.36 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J 60 V 250 A 2.30 m 4.5 V Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS D (5,8) Continuous Drain Steady T = 25C I 250 A C D Current R State JC T = 100C 175 (Notes 1, 3) C Power Dissipation T = 25C P 167 W C D G (4) R (Note 1) JC T = 100C 83 C Continuous Drain Steady T = 25C I 38 A A D S (1,2,3) State Current R JA T = 100C 27 (Notes 1, 2, 3) A NCHANNEL MOSFET Power Dissipation T = 25C P 3.8 W A D R (Notes 1, 2) JA T = 100C 1.9 A MARKING Pulsed Drain Current T = 25C, t = 10 s I 900 A DIAGRAM A p DM DD D D Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 1D6N06 Source Current (Body Diode) I 164 A S CL LFPAK8 AWLYW Single Pulse DraintoSource Avalanche E 451 mJ AS Energy (I = 17 A) CASE 760AA L(pk) 1 Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) S SS G 1D6N06CL = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. WL = Wafer Lot Y = Year THERMAL RESISTANCE MAXIMUM RATINGS W = Work Week Parameter Symbol Value Unit JunctiontoCase Steady State 0.9 C/W R JC ORDERING INFORMATION JunctiontoAmbient Steady State (Note 2) R 36 JA See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2019 Rev. 0 NTMJS1D6N06CL/DNTMJS1D6N06CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 11 mV/C (BR)DSS Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 16 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 1.13 1.36 m DS(on) GS D V = 4.5 V I = 50 A 1.65 2.30 GS D Forward Transconductance g V =15 V, I = 50 A 151 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 6660 pF ISS Output Capacitance C 2953 V = 0 V, f = 1 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 45 RSS Total Gate Charge Q V = 4.5 V, V = 30 V I = 50 A 41 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 30 V I = 50 A 91 G(TOT) GS DS D Threshold Gate Charge Q 5 G(TH) GatetoSource Charge Q 17.1 GS V = 4.5 V, V = 30 V I = 50 A GS DS D GatetoDrain Charge Q 10.9 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) ns TurnOn Delay Time t 19 d(ON) Rise Time t 51 r V = 4.5 V, V = 30 V, GS DS I = 50 A, R = 1 D G TurnOff Delay Time t 47 d(OFF) Fall Time t 18 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.78 1.2 V SD J V = 0 V, GS I = 50 A S T = 125C 0.66 J Reverse Recovery Time t 78 ns RR Charge Time t 36 a V = 0 V, dI /dt = 100 A/ s, GS s I = 50 A S Discharge Time t 42 b Reverse Recovery Charge Q 105 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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