X-On Electronics has gained recognition as a prominent supplier of STF8N60DM2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STF8N60DM2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STF8N60DM2 STMicroelectronics

Name: STF8N60DM2
Brand: STMicroelectronics
SKU: STF8N60DM2_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STF8N60DM2 electronic component of STMicroelectronics

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See Product Specifications

Part No.	STF8N60DM2
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET PTD HIGH VOLTAGE
Datasheet:	STF8N60DM2 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.8841 ea
Line Total: USD 0.88

Availability - 0

MOQ: 1 Multiples: 0
Pack Size: 0

STF8N60DM2 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 1 Multiples : 0	1 : USD 0.8841 10 : USD 0.6386 30 : USD 0.4795 100 : USD 0.4316 500 : USD 0.4038 1000 : USD 0.3884

Specifications

Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 220FP TO - 220FP
Brand Category Stmicroelectronics Stmicroelectronics
Fet Type - -
Drain To Source Voltagevdss - -
Continuous Drain Current Id @ 25°C - -
Vgsth Max @ Id - -
Rds On Max @ Id Vgs - -
Power Dissipation-Max Ta 25°C - -
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 8 A 8 A
Drain Source On Resistance Rdson@Vgs Id 550 mOhms @10V , 4A 550 mOhms @10V , 4A
Power Dissipation Pd 25 W 25 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Reverse Transfer Capacitance Crss@Vds 0.89 pF @100V 0.89 pF @100V
Type N Channel N Channel
Input Capacitance Ciss@Vds 449 pF @100V 449 pF @100V
Total Gate Charge Qg@Vgs 13.5 nC @10V 13.5 nC @10V
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

We are delighted to provide the STF8N60DM2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STF8N60DM2 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The STF8N60DM2 MOSFET is a high voltage power electronic transistor manufactured by STMicroelectronics. This device is capable of blocking off voltages up to 600V, and sustaining a peak drain current of 8A. It has an low on-resistance of 1.1O which enables low voltage losses. The device also has a Total Gate Charge (Qg) of 16.4nC and a Gate Threshold Voltage (Vgs) of 2.0V, which makes it ideal for high power applications. It is suitable for use in Load Switch, H-Bridge, and other high voltage power control applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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