STF9N65M2 STMicroelectronics

STD9N65M2, STF9N65M2 STP9N65M2, STU9N65M2 Datasheet N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features TAB 3 2 V R max. I Order codes Package DS DS(on) D 1 DPAK TAB STD9N65M2 DPAK 3 2 1 STF9N65M2 TO-220FP IPAK 3 650 V 0.90 5 A 2 1 STP9N65M2 TO-220 TAB TO-220FP STU9N65M2 IPAK 3 Extremely low gate charge 2 1 TO-220 Excellent output capacitance (C ) profile OSS D(2, TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) Description AM01475V1 These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 DS10197 - Rev 3 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220, IPAK TO-220FP V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 5 5 D C A (1) I Drain current (continuous) at T = 100 C 3.2 D C 3.2 (2) I Drain current (pulsed) 20 A DM P Total power dissipation at T = 25 C 60 20 W TOT C Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat sink (t = 1 s T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Current limited by package. 2. Pulse width is limited by safe operating area. 3. I 5 A, di/dt = 400 A/s V < V , V = 400 V. SD DS(peak) (BR)DSS DD 4. V 520 V. DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP TO-220 IPAK R Thermal resistance junction-case 2.08 6.25 2.08 C/W thj-case R Thermal resistance junction-pcb 50 C/W thj-pcb (1) R Thermal resistance junction-ambient 62.5 100 C/W thj-amb 2 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 1 A AR (pulse width limited by T max) J Single pulse avalanche energy E 105 mJ AS (starting T = 25 C, I = I V = 50 V) J D AR DD DS10197 - Rev 3 page 2/28