STFI34NM60N STMicroelectronics

STFI34NM60N N-channel 600 V, 0.092 , 31.5 A MDmesh II Power MOSFET in a IPAKFP package Datasheet - production data Features Order code V R I P DSS DS(on) D TOT STFI34NM60N 600 V 0.105 31.5 A 40 W 100% avalanche tested Low input capacitance and gate charge 1 Low gate input resistance 2 3 2 I PAKFP Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Packages Packaging 2 STFI34NM60N 34NM60N I PAKFP (TO-281) Tube July 2013 DocID022439 Rev 3 1/12 This is information on a product in full production. www.st.comContents STFI34NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 DocID022439 Rev 3