STFI7N80K5 STMicroelectronics

STF7N80K5, STFI7N80K5 N-channel 800 V, 0.95 typ., 6 A MDmesh K5 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF7N80K5 800 V 1.2 6 A 25 W STFI7N80K5 2 TO-220FP I PAKFP (TO-281) Industrys lowest RDS(on) x area Industrys best FoM (figure of merit) Ultra-low gate charge Figure 1: Internal schematic diagram 100% avalanche tested Zener-protected D(2) Applications Switching applications G(1) Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power S(3) density and high efficiency. AM01476v1 No tab Table 1: Device summary Order code Marking Package Packing STF7N80K5 TO-220FP 7N80K5 Tube STFI7N80K5 IPAKFP (TO-281) July 2017 DocID025377 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STF7N80K5, STFI7N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220FP package information ...................................................... 11 4.2 IPAKFP (TO-281) package information ......................................... 13 5 Revision history ............................................................................ 15 2/16 DocID025377 Rev 2