STFI260N6F6 STMicroelectronics

STFI260N6F6 N-channel 60 V, 0.0024 , 80 A STripFET VI DeepGATE Power MOSFET in IPAKFP package Datasheet preliminary data Features Order codes V R max I DSS DS(on) D STFI260N6F6 60 V < 0.003 80 A Fully insulated and low profile package with increased creepage path from pin to heatsink plate Low gate charge 1 2 Very low on-resistance 3 High avalanche ruggedness IPAKFP (TO-281) Application Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order codes Marking Package Packaging IPAK STFI260N6F6 260N6F6 Tube (TO-281) April 2012 Doc ID 023096 Rev 1 1/12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 12 change without notice. Contents STFI260N6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 023096 Rev 1