STFI12N60M2 STMicroelectronics

STFI12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAKFP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STFI12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description D(2) This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high G(1) efficiency converters. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STFI12N60M2 12N60M2 IPAKFP Tube May 2015 DocID027899 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STFI12N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAKFP (TO-281) package information ........................................... 9 5 Revision history ............................................................................ 11 2/12 DocID027899 Rev 1