X-On Electronics has gained recognition as a prominent supplier of STFH18N60M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STFH18N60M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STFH18N60M2 STMicroelectronics

STFH18N60M2 electronic component of STMicroelectronics
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See Product Specifications
Part No.STFH18N60M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
Datasheet: STFH18N60M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
48: USD 0.8564 ea
Line Total: USD 41.11 
Availability - 861
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 48  Multiples: 1
Pack Size: 1
Availability Price Quantity
352
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1713

13
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3038
10 : USD 1.2752
30 : USD 1.2541
100 : USD 1.2351

861
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 48
Multiples : 1
48 : USD 0.8564

352
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 7
Multiples : 1
7 : USD 1.1713

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STFH18N60M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STFH18N60M2 and other electronic components in the MOSFETs category and beyond.

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STFH18N60M2 Datasheet N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Features V T R max. I Order code DS Jmax DS(on) D STFH18N60M2 650 V 0.280 13 A Extremely low gate charge Excellent output capacitance (C ) profile OSS TO-220 FP wide creepage 100% avalanche tested D(2) Zener-protected Wide distance of 4.25 mm between the pins Applications G(1) Switching applications LCC converters Resonant converters S(3) AM15572v1 no tab Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments. Product status link STFH18N60M2 Product summary Order code STFH18N60M2 Marking 18N60M2 TO-220FP wide Package creepage Packing Tube DS11693 - Rev 3 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STFH18N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 13 A C (1) I D Drain current (continuous) at T = 100 C 8 A C (2) I Drain current (pulsed) 52 A DM P Total power dissipation at T = 25 C 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 V/ns dv/dt Insulation withstand voltage (RMS) from all three leads to external heat V 2.5 kV ISO sink (t = 1 s T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 13 A, di/dt 400 A/s V < V , V = 400 V SD DS(peak) (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive (pulse width limited by I 3 A AR T ) jmax E Single pulse avalanche energy (starting T =25 C, I = I , V =50 V) 135 mJ AS j D AR DD DS11693 - Rev 3 page 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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