STFI10N65K3 STMicroelectronics

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs 2 2 in D PAK, TO-220FP, I PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes V R max I P DS DS(on) D TOT 3 1 3 STB10N65K3 150 W 2 2 D PAK 1 STF10N65K3 TO-220FP 650 V 1 10 A 35 W STFI10N65K3 TAB STP10N65K3 150 W 100% avalanche tested 3 Extremely low on-resistance R DS(on) 2 1 2 Gate charge minimized I PAKFP (TO-281) TO-220 Very low intrinsic capacitances Improved diode reverse recovery Figure 1. Internal schematic diagram characteristics 7 % Zener-protected Applications Switching applications * Description These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, 6 combined with a new optimized vertical structure. AM01476v1 These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging 2 STB10N65K3 D PAK Tape and reel STF10N65K3 TO-220FP 10N65K3 2 STFI10N65K3 I PAKFP (TO-281) Tube STP10N65K3 TO-220 August 2013 DocID15732 Rev 4 1/21 This is information on a product in full production. www.st.comContents STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID15732 Rev 4