STFI11N65M2 STMicroelectronics

STF11N65M2 Datasheet N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP package Features V R max. I P Order code DS DS(on) D TOT STF11N65M2 650 V 0.68 7 A 25 W Extremely low gate charge Excellent output capacitance (C ) profile 3 OSS 2 1 100% avalanche tested Zener-protected TO-220FP D(2) Applications Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device NG1D2S3Z exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STF11N65M2 Product summary Order code STF11N65M2 Marking 11N65M2 Package TO-220FP Packing Tube DS10136 - Rev 3 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STF11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 7 C (1) I A D Drain current (continuous) at T = 100 C 4.4 C (2) I Drain current (pulsed) 28 A DM P Total power dissipation at T = 25 C 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 dv/dt Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s, T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Limited by maximum junction temperature. 2. Pulse width limited by T max. J 3. I 7 A, di/dt = 400 A/s, V (peak) < V , V = 400 V. SD DS (BR)DSS DD 4. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 5 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T max) 1.5 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 110 mJ AS J D AR DD DS10136 - Rev 3 page 2/12