X-On Electronics has gained recognition as a prominent supplier of STFI15N60M2-EP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STFI15N60M2-EP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STFI15N60M2-EP STMicroelectronics

STFI15N60M2-EP electronic component of STMicroelectronics
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Part No.STFI15N60M2-EP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: N-Channel 600 V 11A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
Datasheet: STFI15N60M2-EP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12: USD 0.5813 ea
Line Total: USD 6.98 
Availability - 1387
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 12  Multiples: 1
Pack Size: 1
Availability Price Quantity
1387
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 12
Multiples : 1
12 : USD 0.5813

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
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We are delighted to provide the STFI15N60M2-EP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STFI15N60M2-EP and other electronic components in the MOSFETs category and beyond.

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STFI15N60M2-EP Datasheet N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in an IPAKFP package Features Order code V T R max. I DS Jmax DS(on) D STFI15N60M2-EP 650 V 0.378 11 A Fully insulated and low profile package with increased creepage path from pin to heatsink plate 1 2 3 Extremely low gate charge 2 I PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche tested D(2) Zener-protected Applications G(1) Switching applications Tailored for very high frequency converters (f > 150 kHz) Description S(3) AM01476v1 This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STFI15N60M2-EP Product summary Order code STFI15N60M2-EP Marking 15N60M2EP Package IPAKFP (TO-281) Packing Tube DS12491 - Rev 2 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STFI15N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 11 A D C (1) I Drain current (continuous) at T = 100 C 7 A C D (2) I Drain current (pulsed) 44 A DM P Total dissipation at T = 25 C 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s,T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 11 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 2.8 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 125 mJ AS j D AR DD DS12491 - Rev 2 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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