STFH13N60M2 STMicroelectronics

STFH13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code V R max I DS DS(on) D STFH13N60M2 600 V 0.38 11 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected Wide creepage distance of 4.25 mm between the pins Applications Switching applications Description This device is an N-channel Power MOSFET Figure 1: Internal schematic diagram developed using MDmesh M2 technology. D(2) Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The TO-220FP wide creepage package provides G(1) increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packaging STFH13N60M2 13N60M2 TO-220FP wide creepage Tube June 2016 DocID029304 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STFH13N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 TO-220FP wide creepage package information ................................ 9 5 Revision history ............................................................................ 11 2/12 DocID029304 Rev 2