STFI10NK60Z STMicroelectronics

STFI10NK60Z N-channel 600 V, 0.65 , 10 A, Zener-protected SuperMESH Power MOSFET in IPAKFP package Datasheet production data Features R DS(on) Type V I P DSS D TOT max STFI10NK60Z 600 V < 0.75 10 A 35 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate 1 2 Extremely high dv/dt capability 3 100% avalanche tested IPAKFP (TO-281) Gate charge minimized Applications Switching applications Figure 1. Internal schematic diagram D(2) Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well- G(1) established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging 2 I PAKFP STFI10NK60Z 10NK60Z Tube (TO-281) March 2012 Doc ID 018968 Rev 3 1/13 This is information on a product in full production. www.st.com 13Contents STFI10NK60Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 12 2/13 Doc ID 018968 Rev 3