STFH10N60M2 STMicroelectronics

STFH10N60M2 Datasheet N-channel 600 V, 0.55 typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Features V at T R max. I Order code DS Jmax. DS(on) D STFH10N60M2 650 V 0.60 7.5 A Extremely low gate charge Excellent output capacitance (C ) profile OSS TO-220FP wide creepage D(2) 100% avalanche tested Zener-protected Wide distance of 4.25 mm between the pins G(1) Applications Switching applications S(3) LLC converters, resonant converters AM15572v1 no tab Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments. Product status link STFH10N60M2 Product summary Order code STFH10N60M2 Marking 10N60M2 TO-220FP wide Package creepage Packing Tube DS11690 - Rev 5 - January 2021 www.st.com For further information contact your local STMicroelectronics sales office.STFH10N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 7.5 C (1) I A D Drain current (continuous) at T = 100 C 4.9 C (2) I Drain current (pulsed) 30 A DM P Total power dissipation at T = 25 C 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 dv/dt (5) V Insulation withstand voltage (RMS) from all three leads to external heat sink 2500 V ISO T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by package. 2. Pulse limited by safe operating area. 3. I 7.5 A, di/dt 400 A/s V peak < V , V = 400 V SD DS (BR)DSS DD 4. V 480 V. DS 5. t = 1 s T = 25 C. C Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 5 thJC C/W R Thermal resistance, junction-to-ambient 62.5 thJA Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1.5 A AR (2) E Single pulse avalanche energy 110 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS11690 - Rev 5 page 2/12