X-On Electronics has gained recognition as a prominent supplier of STF9NM60N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STF9NM60N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STF9NM60N STMicroelectronics

STF9NM60N electronic component of STMicroelectronics
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Part No.STF9NM60N
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: N-Channel 600 V 6.5A (Tc) 25W (Tc) Through Hole TO-220FP
Datasheet: STF9NM60N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2878 ea
Line Total: USD 2.29 
Availability - 776
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
776
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.2878
10 : USD 2.1009
50 : USD 1.9827
100 : USD 1.8625
500 : USD 1.8091
1000 : USD 1.7842

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
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Typical Turn-On Delay Time
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We are delighted to provide the STF9NM60N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STF9NM60N and other electronic components in the MOSFETs category and beyond.

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STD9NM60N, STF9NM60N, STP9NM60N Datasheet N-channel 600 V, 0.63 typ., 6.5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB 3 2 1 DPAK V R max. I Order code Package DS DS(on) D TAB STD9NM60N DPAK STF9NM60N 600 V 0.745 6.5 A TO-220FP 3 3 2 2 1 1 STP9NM60N TO-220 TO-220 TO-220FP 100% avalanche tested D(2, TAB) Low input capacitance and gate charge Low gate input resistance Applications G(1) Switching applications S(3) Description AM01475v1 noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STD9NM60N STF9NM60N STP9NM60N DS6986 - Rev 2 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD9NM60N, STF9NM60N, STP9NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 TO-220FP V Drain-source voltage 600 V DS V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 6.5 6.5 A D C (1) I Drain current (continuous) at T = 100 C 4 4 A D C (2) (1) I Drain current (pulsed) 26 26 A DM P Total dissipation at T = 25 C 70 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat sink (t = 1 s T = 25 C) c T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 6.5 A, di/dt 400 A/s,, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.79 5 thj-case R Thermal resistance junction-ambient 62.5 thj-amb C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 2.5 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 115 mJ AS j D AR DD DS6986 - Rev 2 page 2/24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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