X-On Electronics has gained recognition as a prominent supplier of STF7N65M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STF7N65M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STF7N65M2 STMicroelectronics

STF7N65M2 electronic component of STMicroelectronics
STF7N65M2 STMicroelectronics
STF7N65M2 MOSFETs
STF7N65M2  Semiconductors

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See Product Specifications
Part No. STF7N65M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STF7N65M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.8136 ea
Line Total: USD 40.68 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1000
Multiples : 1000
1000 : USD 2.145
2000 : USD 2.1269
3000 : USD 2.1088
4000 : USD 2.0908
5000 : USD 2.0726
10000 : USD 2.0544
20000 : USD 2.0361
25000 : USD 2.0178
50000 : USD 1.9993

0
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7259
10 : USD 0.7108
30 : USD 0.7014
100 : USD 0.6922

0
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 4.3118
10 : USD 1.5542
25 : USD 1.474

0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 50
Multiples : 50
50 : USD 0.8136
2000 : USD 0.7973

0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 50
Multiples : 50
50 : USD 0.8115

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the STF7N65M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STF7N65M2 and other electronic components in the MOSFETs category and beyond.

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STF7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - preliminary data Features R DS(on) Order code V I DS D max STF7N65M2 650 V 1.15 5 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile oss 1 100% avalanche tested TO-220FP Zener-protected Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the MDmesh M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package Packaging STF7N65M2 7N65M2 TO-220FP Tube August 2014 DocID026763 Rev 2 1/13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com change without notice. Contents STF7N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID026763 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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