STD4N52K3, STP4N52K3, STU4N52K3 Datasheet N-channel 525 V, 2.1 typ., 2.5 A MDmesh K3 Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 Order code V R max. I Package DS DS(on) D 1 DPAK STD4N52K3 2.5 A DPAK 3 2 TO-220 TAB 1 STP4N52K3 525 V 2.6 2.5 A TO-220 STU4N52K3 2.5 A IPAK 3 2 IPAK 1 100% avalanche tested Extremely high dv/dt capability D(2, TAB) Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Product status link STD4N52K3 STP4N52K3 STU4N52K3 DS7026 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD4N52K3, STP4N52K3, STU4N52K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 525 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 2.5 A D C I Drain current (continuous) at T = 100 C 2 A D C (1) I Drain current (pulsed) 10 A DM P Total dissipation at T = 25 C 45 W TOT C (2) dv/dt Peak diode recovery voltage slope 12 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 2.5 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 2.78 2.78 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 1.3 A AR (2) E Single pulse avalanche energy 110 mJ AS 1. Pulse width limited by T max. j 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS7026 - Rev 3 page 2/27