X-On Electronics has gained recognition as a prominent supplier of STF43N60DM2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STF43N60DM2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STF43N60DM2 STMicroelectronics

STF43N60DM2 electronic component of STMicroelectronics
STF43N60DM2 STMicroelectronics
STF43N60DM2 MOSFETs
STF43N60DM2  Semiconductors

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See Product Specifications
Part No. STF43N60DM2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET PTD HIGH VOLTAGE
Datasheet: STF43N60DM2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 3.653 ea
Line Total: USD 32.88 
Availability - 20
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ: 9  Multiples: 1
Pack Size: 1
Availability Price Quantity
20
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 9
Multiples : 1
9 : USD 3.653
20 : USD 3.575
75 : USD 3.523
200 : USD 3.484
750 : USD 3.38

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STF43N60DM2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STF43N60DM2 and other electronic components in the MOSFETs category and beyond.

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STF43N60DM2 Datasheet N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-220FP package Features V T max. R max. I P Order code DS J DS(on) D TOT STF43N60DM2 650 V 0.093 34 A 40 W Fast-recovery body diode Extremely low gate charge and input capacitance 3 2 1 Low on-resistance 100% avalanche tested TO-220FP Extremely high dv/dt ruggedness D(2) Zener-protected Applications G(1) Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- S(3) AM15572v1 no tab recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STF43N60DM2 Product summary Order code STF43N60DM2 Marking 43N60DM2 Package TO-220FP Packing Tube DS10532 - Rev 3 - August 2019 www.st.com For further information contact your local STMicroelectronics sales office.STF43N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 34 case (1) I D Drain current (continuous) at T = 100 C 21 A case (2) I Drain current (pulsed) 136 DM P Total power dissipation at T = 25 C 40 W TOT case (3) dv/dt Peak diode recovery voltage slope 50 V/ns (4) MOSFET dv/dt ruggedness 50 dv/dt Insulation withstand voltage (RMS) from all three leads to external heat V 2.5 kV ISO sink (t = 1 s T = 25 C) C T Storage temperature range C stg 55 to 150 T Operating junction temperature range C j 1. Limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. I 34, di/dt 900 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 3.13 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 6 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 800 mJ AR (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10532 - Rev 3 page 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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