X-On Electronics has gained recognition as a prominent supplier of STF5N52K3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STF5N52K3 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STF5N52K3 STMicroelectronics

STF5N52K3 electronic component of STMicroelectronics
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Part No.STF5N52K3
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3
Datasheet: STF5N52K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.0693
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7597
10 : USD 0.7447
30 : USD 0.7352
100 : USD 0.7259
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.3042
10 : USD 0.8177
100 : USD 0.5892
500 : USD 0.4991
1000 : USD 0.4008
5000 : USD 0.3645
10000 : USD 0.3479
25000 : USD 0.3376
N/A

Obsolete
0
MOQ : 50
Multiples : 1
50 : USD 0.1457
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
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Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
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Typical Turn-On Delay Time
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We are delighted to provide the STF5N52K3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STF5N52K3 and other electronic components in the MOSFETs category and beyond.

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STD5N52K3, STF5N52K3, STU5N52K3 Datasheet N-channel 525 V, 1.2 typ., 4.4 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V R max. I Package DS DS(on) D STD5N52K3 DPAK STF5N52K3 525 V 1.5 4.4 A TO-220FP STU5N52K3 IPAK D(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance G(1) Improved diode reverse recovery characteristics Zener-protected Applications S(3) AM01475V1 Switching applications Description These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Product status link STD5N52K3 STF5N52K3 STU5N52K3 DS6663 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5N52K3, STF5N52K3, STU5N52K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, IPAK TO-220FP V Drain-source voltage 525 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 4.4 4.4 A D C (1) I Drain current (continuous) at T = 100 C 2.77 2.77 A D C (2) (1) I Drain current (pulsed) 17.6 17.6 A DM P Total dissipation at T = 25 C 70 25 W TOT C Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat-sink (t = 1 s, T = 25 C) C (3) Peak diode recovery voltage slope 12 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 4.4 A, di/dt 100 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP IPAK R Thermal resistance junction-case 1.79 5 1.79 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 2.2 A AR (2) E Single pulse avalanche energy 100 mJ AS 1. Pulse width limited by T max. j 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS6663 - Rev 3 page 2/27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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