X-On Electronics has gained recognition as a prominent supplier of SI4482DY MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4482DY MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4482DY Vishay

SI4482DY electronic component of Vishay
SI4482DY Vishay
SI4482DY MOSFETs
SI4482DY  Semiconductors

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See Product Specifications
Part No. SI4482DY
Manufacturer: Vishay
Category: MOSFETs
Description: SI4482DY SI4482DY
Datasheet: SI4482DY Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.8414 ea
Line Total: USD 3.84 
Availability - 30
Ship by Mon. 07 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
30
Ship by Mon. 07 Apr
MOQ : 1
Multiples : 1
1 : USD 3.8414
25 : USD 1.9207
50 : USD 1.7286
75 : USD 1.4405
100 : USD 1.2965

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Configuration
Brand
Factory Pack Quantity :
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We are delighted to provide the SI4482DY from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4482DY and other electronic components in the MOSFETs category and beyond.

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Si4482DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.060 at V = 10 V 4.6 GS TrenchFET Power MOSFETs 100 0.080 at V = 6 V 4.0 GS Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information: Si4482DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4482DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 100 DS V Gate-Source Voltage V 20 GS T = 25 C 4.6 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.7 A A I Pulsed Drain Current 40 DM a I 2.1 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 A a P W Maximum Power Dissipation D T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol LimitUnit a R 50 C/W Maximum Junction-to-Ambient thJA Notes: a. Surface Mounted on FR4 board, t 10 s. Document Number: 70749 www.vishay.com S09-0767-Rev. C, 04-May-09 1Si4482DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Gate Threshold Voltage V V = V , I = 250 A 2V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 20 DS GS J b I V = 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 4.6 A 0.045 0.060 GS D b R Drain-Source On-State Resistance DS(on) V = 6 V, I = 4.0 A 0.050 0.080 GS D b g V = 15 V, I = 4.6 A 20 S Forward Transconductance fs DS D b V I = 2.1 A, V = 0 V 1.2 V Diode Forward Voltage SD S GS a Dynamic Q Total Gate Charge 30 50 g Q V = 50 V, V = 10 V, I = 4.6 A Gate-Source Charge 7.5 nC gs DS GS D Q Gate-Drain Charge 7 gd R Gate Resistance 14.4 g t Turn-On Delay Time 13 25 d(on) t Rise Time V = 50 V, R = 50 12 25 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 60 90 ns D GEN g d(off) t Fall Time 25 40 f Source-Drain Reverse Recovery Time t I = 2.1 A, dI/dt = 100 A/s 50 80 rr F Notes: a. For design aid only not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70749 2 S09-0767-Rev. C, 04-May-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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