Si4482DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.060 at V = 10 V 4.6 GS TrenchFET Power MOSFETs 100 0.080 at V = 6 V 4.0 GS Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information: Si4482DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4482DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 100 DS V Gate-Source Voltage V 20 GS T = 25 C 4.6 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.7 A A I Pulsed Drain Current 40 DM a I 2.1 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 A a P W Maximum Power Dissipation D T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol LimitUnit a R 50 C/W Maximum Junction-to-Ambient thJA Notes: a. Surface Mounted on FR4 board, t 10 s. Document Number: 70749 www.vishay.com S09-0767-Rev. C, 04-May-09 1Si4482DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Gate Threshold Voltage V V = V , I = 250 A 2V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 20 DS GS J b I V = 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 4.6 A 0.045 0.060 GS D b R Drain-Source On-State Resistance DS(on) V = 6 V, I = 4.0 A 0.050 0.080 GS D b g V = 15 V, I = 4.6 A 20 S Forward Transconductance fs DS D b V I = 2.1 A, V = 0 V 1.2 V Diode Forward Voltage SD S GS a Dynamic Q Total Gate Charge 30 50 g Q V = 50 V, V = 10 V, I = 4.6 A Gate-Source Charge 7.5 nC gs DS GS D Q Gate-Drain Charge 7 gd R Gate Resistance 14.4 g t Turn-On Delay Time 13 25 d(on) t Rise Time V = 50 V, R = 50 12 25 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 60 90 ns D GEN g d(off) t Fall Time 25 40 f Source-Drain Reverse Recovery Time t I = 2.1 A, dI/dt = 100 A/s 50 80 rr F Notes: a. For design aid only not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70749 2 S09-0767-Rev. C, 04-May-09