STFI13N60M2 STMicroelectronics

STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Q g 2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet production data Features Order codes V T R max I DS Jmax DS(on) D STF13N60M2 650 V 0.38 11 A STFI13N60M2 3 2 Extremely low gate charge 1 1 2 3 TO-220FP Lower R x area vs previous generation DS(on) 2 I PAKFP Low gate input resistance (TO-281) 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Q . These g revolutionary Power MOSFETs associate a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking Package Packaging STF13N60M2 TO-220FP 13N60M2 Tube 2 STFI13N60M2 I PAKFP (TO-281) March 2014 DocID023939 Rev 4 1/14 This is information on a product in full production. www.st.com 14Contents STF13N60M2, STFI13N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 DocID023939 Rev 4