STFI26N60M2 STMicroelectronics

STF26N60M2, STFI26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features V R DS DS(on) Order code I P D TOT T max. Jmax STF26N60M2 3 30 2 650 V 0.165 20 A 1 1 W 2 3 STFI26N60M2 2 TO-220FP I PAKFP (TO-281) Extremely low gate charge Excellent output capacitance (C ) profile OSS Figure 1: Internal schematic diagram 100% avalanche tested D(2) Zener-protected Applications Switching applications LCC converters, resonant converters G(1) Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, S(3) AM15572v1 no tab rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STF26N60M2 TO-220FP 26N60M2 Tube STFI26N60M2 IPAKFP July 2015 DocID027600 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STF26N60M2, STFI26N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ...................................................... 10 4.2 IPAKFP (TO-281) package information ......................................... 12 5 Revision history ............................................................................ 14 2/15 DocID027600 Rev 2