STFI20NK50Z STMicroelectronics

STFI20NK50Z N-channel 500 V, 0.23 , 17 A Zener-protected SuperMESH Power MOSFET in IPAKFP package Datasheet production data Features R DS(on) Type V I P DSS D TOT max STFI20NK50Z 500 V < 0.27 17 A 40 W Fully insulated and low profile package with increased creepage path from pin to heatsink 1 plate 2 3 Extremely high dv/dt capability 2 I PAKFP 100% avalanche tested (TO-281) Gate charge minimized Applications Figure 1. Internal schematic diagram Switching applications D(2) Description This device is an N-channel Zener-protected Power MOSFET developed using G(1) STMicroelectronics SuperMESH technology, achieved through optimization of ST s well- established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging 2 I PAKFP STFI20NK50Z 20NK50Z Tube (TO-281) March 2012 Doc ID 019007 Rev 3 1/13 This is information on a product in full production. www.st.com 13Contents STFI20NK50Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits . 9 4 Package mechanical data 10 5 Revision history . 12 2/13 Doc ID 019007 Rev 3