STFI8N80K5 STMicroelectronics

STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 typ., 6 A MDmesh K5 2 Power MOSFET in TO-220FP and I PAKFP packages Datasheet production data Features Order codes V R max. I P DS DS(on) D TOT STF8N80K5 800 V 0.95 6 A 25 W STFI8N80K5 Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) 3 1 2 2 Ultra low gate charge 1 3 TO-220FP 2 I PAKFP (TO-281) 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram Switching applications D(2) Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 G(1) technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STF8N80K5 TO-220FP 8N80K5 Tube 2 STFI8N80K5 I PAKFP (TO-281) October 2014 DocID024419 Rev 3 1/15 This is information on a product in full production. www.st.com 15Contents STF8N80K5, STFI8N80K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 14 2/15 DocID024419 Rev 3