Product Information

STFU10NK60Z

STFU10NK60Z electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 0.68 Ohm typ., 10 A SuperMESH Power MOSFET in TO-220FP ultra narrow leads package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2025 ea
Line Total: USD 2.2

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STFU10NK60Z
STMicroelectronics

1 : USD 2.2025
10 : USD 1.7153
100 : USD 1.352
500 : USD 1.1212
1000 : USD 0.9669
5000 : USD 0.806

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STFU10NK60Z
STMicroelectronics

1 : USD 4.648
10 : USD 1.6669

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STFU10NK60Z N-channel 600 V, 0.68 typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max. I P DS DS(on) D tot STFU10NK60Z 600 V 0.75 10 A 35 W Extremely high dv/dt capability 100% avalanche tested 3 Gate charge minimized 2 1 Zener-protected TO-220FP Applications ultra narrow leads Switching applications Figure 1: Internal schematic diagram Description This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1: Device summary Order code Marking Package Packaging STFU10NK60Z 10NK60Z TO-220FP ultra narrow leads Tube December 2016 DocID028779 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STFU10NK60Z Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220FP ultra narrow leads package information ......................... 10 5 Revision history ............................................................................ 12 2/13 DocID028779 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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