STFU25N60M2-EP STMicroelectronics

STFU25N60M2-EP Datasheet N-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP ultra narrow leads package Features Order code V T R max. I DS Jmax DS(on) D STFU25N60M2-EP 650 V 0.188 18 A Extremely low gate charge 3 Excellent output capacitance (C ) profile OSS 2 1 Very low turn-off switching losses TO-220FP 100% avalanche tested ultra narrow leads Zener-protected D(2) Applications Switching applications G(1) Tailored for Very high frequency converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh S(3) AM15572v1 no tab M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status link STFU25N60M2-EP Product summary Order code STFU25N60M2-EP Marking 25N60M2EP TO-220FP Package ultra narrow leads Packing Tube DS12203 - Rev 4 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STFU25N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 18 A D C (1) I Drain current (continuous) at T = 100 C 11.3 A C D (2) I Drain current (pulsed) 72 A DM P Total dissipation at T = 25 C 30 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s, T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. I 18 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 4.2 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 3.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 200 mJ AS j D AR DD DS12203 - Rev 4 page 2/13