X-On Electronics has gained recognition as a prominent supplier of STFU25N60M2-EP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STFU25N60M2-EP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STFU25N60M2-EP STMicroelectronics

STFU25N60M2-EP electronic component of STMicroelectronics
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Part No.STFU25N60M2-EP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 600 V 0.175 Ohm typ. 18 A MDmesh M2 EP Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet: STFU25N60M2-EP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.4305 ea
Line Total: USD 7.43 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 7.4305
10 : USD 2.7133

   
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We are delighted to provide the STFU25N60M2-EP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STFU25N60M2-EP and other electronic components in the MOSFETs category and beyond.

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STFU25N60M2-EP Datasheet N-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP ultra narrow leads package Features Order code V T R max. I DS Jmax DS(on) D STFU25N60M2-EP 650 V 0.188 18 A Extremely low gate charge 3 Excellent output capacitance (C ) profile OSS 2 1 Very low turn-off switching losses TO-220FP 100% avalanche tested ultra narrow leads Zener-protected D(2) Applications Switching applications G(1) Tailored for Very high frequency converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh S(3) AM15572v1 no tab M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status link STFU25N60M2-EP Product summary Order code STFU25N60M2-EP Marking 25N60M2EP TO-220FP Package ultra narrow leads Packing Tube DS12203 - Rev 4 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STFU25N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 18 A D C (1) I Drain current (continuous) at T = 100 C 11.3 A C D (2) I Drain current (pulsed) 72 A DM P Total dissipation at T = 25 C 30 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s, T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. I 18 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 4.2 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 3.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 200 mJ AS j D AR DD DS12203 - Rev 4 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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