2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C A 380mA Fast Switching Speed 2 V = 10V GS 60V Low Input/Output Leakage 3 V = 5V 310mA GS ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance PPAP Capable (Note 4) (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: SOT23 Applications Case Material: Mo lded P las t ic, Green Molding Motor Control Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (Approximate) Drain SOT23 D Gate G S Gate ESD protected up to 2kV Protection Source Diode Top View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Compliance Case Packaging 2N7002K-7 Standard SOT23 3000/Tape & Reel 2N7002KQ-7 Automotive SOT23 3000/Tape & Reel 2N7002K-13 Standard SOT23 10000/Tape & Reel 2N7002KQ-13 Automotive SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See 2N7002K Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 380 A I mA D State 300 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 430 A t<5s mA I D 340 T = +70C A Steady T = +25C 310 A I mA D State 240 TA = +70C Continuous Drain Current (Note 7) V = 5V GS T = +25C 350 A t<5s mA I D 270 T = +70C A Maximum Continuous Body Diode Forward Current (Note 7) I 0.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 7) I 1.2 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 370 mW P D Steady State 357 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<5s 292 Total Power Dissipation (Note 7) 540 mW P D Steady State 240 Thermal Resistance, Junction to Ambient (Note 7) R JA t<5s 197 C/W Thermal Resistance, Junction to Case (Note 7) 91 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 1.6 2.5 V V = 10V, I = 1mA GS(TH) DS D 2.0 V = 10V, I = 0.5A GS D Static Drain-Source On-Resistance R DS(ON) 3.0 V = 5V, I = 0.05A GS D Forward Transfer Admittance 80 ms Y V =10V, I = 0.2A fs DS D Diode Forward Voltage 0.75 1.1 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 30 50 pF C iss V = 25V, V = 0V DS GS Output Capacitance C 4.2 25 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.9 5.0 pF rss Gate Resistance R 133 f = 1MHz , V = 0V, V = 0V g GS DS Total Gate Charge Q 0.3 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.2 nC gs I = 250mA D Gate-Drain Charge 0.08 nC Q gd Turn-On Delay Time 3.9 ns t D(ON) Turn-On Rise Time 3.4 ns t V = 30V, V = 10V, R DD GS Turn-Off Delay Time 15.7 ns R = 25, I = 200mA t G D D(OFF) Turn-Off Fall Time 9.9 ns t F Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. De vice m o un ted o n 1 x 1 FR -4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 2N7002K August 2018 Diodes Incorporated www.diodes.com Document number: DS30896 Rev. 15 - 2 NEW PRODUCT