STFW24N60M2 STMicroelectronics

STFW24N60M2 Datasheet N-channel 600 V, 168 m typ., 18 A MDmesh M2 Power MOSFET in TO-3PF package Features V T R max. I Order code DS Jmax DS(on) D STFW24N60M2 650 V 190 m 18 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected 3 2 1 Applications TO-3PF Switching applications LCC converters D(2) Resonant converters Description G(1) This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM15572v1 no tab Product status link STFW24N60M2 Product summary Order code STFW24N60M2 Marking 24N60M2 Package TO-3PF Packing Tube DS13264 - Rev 1 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STFW24N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 18 A C (1) I D Drain current (continuous) at T = 100 C 12 A C (2) I Drain current (pulsed) 72 A DM P Total power dissipation at T = 25 C 48 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 V/ns dv/dt Insulation withstand voltage (RMS) from all three leads to external heat V 3.5 kV ISO sink (t = 1 s T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 18 A, di/dt 400 A/s V < V , V = 400 V SD DS(peak) (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.6 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 3.5 A AR (pulse width limited by T ) jmax E Single pulse avalanche energy (starting T =25 C, I = I , V =50 V) 180 mJ AS j D AR DD DS13264 - Rev 1 page 2/12