STFI9N80K5 STMicroelectronics

STF9N80K5, STFI9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max. I DS DS(on) D STF9N80K5 800 V 0.90 7 A STFI9N80K5 2 TO-220FP I PAKFP (TO-281) Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra-low gate charge Figure 1: Internal schematic diagram 100% avalanche tested D(2) Zener-protected Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power S(3) density and high efficiency. AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STF9N80K5 TO-220FP 9N80K5 Tube STFI9N80K5 IPAKFP(TO-281) November 2015 DocID028359 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STF9N80K5, STFI9N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220FP package information ...................................................... 11 4.2 I2PAKFP (TO-281) package information ......................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028359 Rev 2