STF9N60M2 STMicroelectronics

STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Q g 2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - production data Features V R DS DS(on) Order codes I D T max Jmax STF9N60M2 650 V 0.78 5.5 A STFI9N60M2 Extremely low gate charge 3 2 1 2 1 3 Lower R x area vs previous generation DS(on) 2 TO-220FP I PAKFP (TO-281) Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Q . These g revolutionary Power MOSFETs associate a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 . Table 1. Device summary Order codes Marking Package Packaging STF9N60M2 TO-220FP 9N60M2 Tube 2 STFI9N60M2 I PAKFP March 2014 DocID024728 Rev 2 1/15 This is information on a product in full production. www.st.comContents STF9N60M2, STFI9N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/15 DocID024728 Rev 2