STH275N8F7-2AG STMicroelectronics

STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 m typ., 180 A, STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 Datasheet - production data Features Order code V R max. I DS DS(on) D STH275N8F7-2AG 80 V 2.1 m 180 A STH275N8F7-6AG AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Figure 1: Internal schematic diagram Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH275N8F7-2AG HPAK-2 275N8F7 Tape and reel STH275N8F7-6AG HPAK-6 January 2017 DocID027223 Rev 4 1/18 www.st.com This is information on a product in full production. Contents STH275N8F7-2AG, STH275N8F7-6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 4.2 HPAK-6 package information ......................................................... 12 4.3 HPAK packing information ............................................................. 15 5 Revision history ............................................................................ 17 2/18 DocID027223 Rev 4