STH410N4F7-2AG STMicroelectronics

STH410N4F7-2AG, STH410N4F7-6AG Automotive-grade N-channel 40 V, 0.8 m typ., 200 A STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STH410N4F7-2AG 40 V 1.1 m 200 A 365 W STH410N4F7-6AG Designed for automotive applications and AEC-Q101 qualified Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1: Internal schematic diagram Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH410N4F7-2AG HPAK-2 410N4F7 Tape And Reel STH410N4F7-6AG HPAK-6 February 2016 DocID027734 Rev 4 1/19 www.st.com This is information on a product in full production. Contents STH410N4F7-2AG, STH410N4F7-6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 4.2 HPAK-6 package information ......................................................... 13 4.3 HPAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID027734 Rev 4