STH310N10F7-2 STMicroelectronics

STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 m typ.,180 A, STripFET F7 2 2 Power MOSFETs in H PAK-2 and H PAK-6 packages Datasheet - production data TAB Features TAB Order code V R max. I DS DS(on) D STH310N10F7-2 7 100 V 2.3 m 180 A 2 STH310N10F7-6 3 1 1 2 2 H PAK-6 H PAK-2 Among the lowest RDS(on) on the market Figure 1: Internal schematic diagram Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on- resistance, while also reducing internal capacitance and gate charge for faster and more S(2,3,4,5,6,7) efficient switching. Table 1: Device summary Order code Marking Package Packing 2 STH310N10F7-2 H PAK-2 310N10F7 Tape and reel 2 STH310N10F7-6 H PAK-6 July 2015 DocID024040 Rev 4 1/19 www.st.com This is information on a product in full production. Contents STH310N10F7-2, STH310N10F7-6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 H2PAK-2 package information ........................................................ 10 4.2 H2PAK-6 package information ........................................................ 13 4.3 Packing information ......................................................................... 16 5 Revision history ............................................................................ 18 2/19 DocID024040 Rev 4