X-On Electronics has gained recognition as a prominent supplier of STH260N6F6-2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STH260N6F6-2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STH260N6F6-2 STMicroelectronics

Name: STH260N6F6-2
Brand: STMicroelectronics
SKU: STH260N6F62_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STH260N6F6-2 electronic component of STMicroelectronics

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Part No.	STH260N6F6-2
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
Datasheet:	STH260N6F6-2 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

25: USD 2.626 ea
Line Total: USD 65.65

Availability - 551
Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ: 25 Multiples: 1
Pack Size: 1

STH260N6F6-2 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

436

Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ : 18
Multiples : 1

18 : USD 3.5867

436

Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ : 18
Multiples : 1

18 : USD 3.5867

551

Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ : 25
Multiples : 1

25 : USD 2.626
50 : USD 2.47
200 : USD 2.3375
500 : USD 1.95

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

120 A 120 A

Vds - Drain-Source Breakdown Voltage

75 V 75 V

Rds On - Drain-Source Resistance

2.4 mOhms 2.4 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

4 V 4 V

Pd - Power Dissipation

300 W 300 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

I2PAK I2PAK

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

183 nC 183 nC

Tradename

Stripfet Stripfet

Series

Sth260n6f6 - 2 Sth260n6f6 - 2

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

120 A 120 A

Drain-Source Breakdown Voltage

75 V 75 V

Gate-Source Breakdown Voltage

20 V 20 V

Power Dissipation

300 W 300 W

Rds On

2.4 Mohms 2.4 Mohms

Fall Time

62.6 ns 62.6 ns

Gate Charge Qg

183 nC 183 nC

Rise Time

165 ns 165 ns

Factory Pack Quantity :

1000 1000

Configuration

Single Single

Transistor Type

1 N - Channel 1 N - Channel

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Notes:- Show Stocked Products With Similar Attributes.

STH260N6F6-2 Alternative Parts

We are delighted to provide the STH260N6F6-2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STH260N6F6-2 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STH260N6F6-2 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-2 package Datasheet production data Features Order code V R max I DSS DS(on) D TAB STH260N6F6-2 60 V < 2.4 m 180 A Low gate charge 2 Very low on-resistance 3 1 High avalanche ruggedness 2 H PAK-2 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate 4 structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order code Marking Package Packaging 2 STH260N6F6-2 260N6F6 H PAK-2 Tape and reel July 2012 Doc ID 018784 Rev 4 1/14 This is information on a product in full production. www.st.com 14Contents STH260N6F6-2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 Doc ID 018784 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

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SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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Availability	Price	Buy Price	Quantity
436 Ship by Fri. 21 Mar to Thu. 27 Mar MOQ : 18 Multiples : 1	18 : USD 3.5867

436 Ship by Fri. 21 Mar to Thu. 27 Mar MOQ : 18 Multiples : 1	18 : USD 3.5867

551 Ship by Fri. 21 Mar to Thu. 27 Mar MOQ : 25 Multiples : 1	25 : USD 2.626 50 : USD 2.47 200 : USD 2.3375 500 : USD 1.95

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