X-On Electronics has gained recognition as a prominent supplier of STH260N6F6-2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STH260N6F6-2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STH260N6F6-2 STMicroelectronics

STH260N6F6-2 electronic component of STMicroelectronics
STH260N6F6-2 STMicroelectronics
STH260N6F6-2 MOSFETs
STH260N6F6-2  Semiconductors

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See Product Specifications
Part No. STH260N6F6-2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
Datasheet: STH260N6F6-2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
22: USD 3.0063 ea
Line Total: USD 66.14 
Availability - 551
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 22  Multiples: 1
Pack Size: 1
Availability Price Quantity
436
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 18
Multiples : 1
18 : USD 3.5867

436
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 18
Multiples : 1
18 : USD 3.5867

551
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 22
Multiples : 1
22 : USD 3.0063

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STH260N6F6-2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STH260N6F6-2 and other electronic components in the MOSFETs category and beyond.

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STH260N6F6-2 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-2 package Datasheet production data Features Order code V R max I DSS DS(on) D TAB STH260N6F6-2 60 V < 2.4 m 180 A Low gate charge 2 Very low on-resistance 3 1 High avalanche ruggedness 2 H PAK-2 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate 4 structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order code Marking Package Packaging 2 STH260N6F6-2 260N6F6 H PAK-2 Tape and reel July 2012 Doc ID 018784 Rev 4 1/14 This is information on a product in full production. www.st.com 14Contents STH260N6F6-2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 Doc ID 018784 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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