STH260N6F6-2 STMicroelectronics

STH260N6F6-2 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-2 package Datasheet production data Features Order code V R max I DSS DS(on) D TAB STH260N6F6-2 60 V < 2.4 m 180 A Low gate charge 2 Very low on-resistance 3 1 High avalanche ruggedness 2 H PAK-2 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate 4 structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order code Marking Package Packaging 2 STH260N6F6-2 260N6F6 H PAK-2 Tape and reel July 2012 Doc ID 018784 Rev 4 1/14 This is information on a product in full production. www.st.com 14Contents STH260N6F6-2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 Doc ID 018784 Rev 4