X-On Electronics has gained recognition as a prominent supplier of BUZ30A H MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUZ30A H MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUZ30A H Infineon

BUZ30A H electronic component of Infineon
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See Product Specifications
Part No.BUZ30A H
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Channel 200V Transistor
Datasheet: BUZ30A H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.8319
10 : USD 2.5566
100 : USD 2.0546
500 : USD 1.5981
1000 : USD 1.3241
N/A

Obsolete
0
MOQ : 491
Multiples : 1
491 : USD 0.6444
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.5308
10 : USD 1.5741
100 : USD 1.2945
500 : USD 1.1496
1000 : USD 0.9828
2500 : USD 0.9517
5000 : USD 0.9517
10000 : USD 0.9155
25000 : USD 0.8782
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BUZ30A H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUZ30A H and other electronic components in the MOSFETs category and beyond.

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BUZ 30A H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type V I R Package Pb-free DS D DS(on) BUZ 30A H 200 V 21 A 0.13 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current I A D T = 26 C 21 C Pulsed drain current I Dpuls T = 25 C 84 C Avalanche current,limited by T I 21 jmax AR Avalanche energy,periodic limited by T E 12 mJ jmax AR Avalanche energy, single pulse E AS I = 21 A, V = 50 V, R = 25 D DD GS L = 1.53 mH, T = 25 C 450 j Gate source voltage V 20 V GS Power dissipation P W tot T = 25 C 125 C Operating temperature T -55 ... + 150 C j Storage temperature T -55 ... + 150 stg Thermal resistance, chip case R 1 K/W thJC Thermal resistance, chip to ambient R 75 thJA DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Rev. 2.5 Page 1 2010-07-02BUZ 30A H Electrical Characteristics, at T = 25C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS V = 0 V, I = 0.25 mA, T = 25 C 200 - - GS D j Gate threshold voltage V GS(th) V =V I = 1 mA 2.1 3 4 GS DS, D Zero gate voltage drain current I A DSS V = 200 V, V = 0 V, T = 25 C - 0.1 1 DS GS j V = 200 V, V = 0 V, T = 125 C - 10 100 DS GS j Gate-source leakage current I nA GSS V = 20 V, V = 0 V - 10 100 GS DS Drain-Source on-resistance R DS(on) V = 10 V, I = 13.5 A - 0.1 0.13 GS D Rev. 2.5 Page 2 2010-07-02

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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