BUZ 30A H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type V I R Package Pb-free DS D DS(on) BUZ 30A H 200 V 21 A 0.13 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current I A D T = 26 C 21 C Pulsed drain current I Dpuls T = 25 C 84 C Avalanche current,limited by T I 21 jmax AR Avalanche energy,periodic limited by T E 12 mJ jmax AR Avalanche energy, single pulse E AS I = 21 A, V = 50 V, R = 25 D DD GS L = 1.53 mH, T = 25 C 450 j Gate source voltage V 20 V GS Power dissipation P W tot T = 25 C 125 C Operating temperature T -55 ... + 150 C j Storage temperature T -55 ... + 150 stg Thermal resistance, chip case R 1 K/W thJC Thermal resistance, chip to ambient R 75 thJA DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Rev. 2.5 Page 1 2010-07-02BUZ 30A H Electrical Characteristics, at T = 25C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS V = 0 V, I = 0.25 mA, T = 25 C 200 - - GS D j Gate threshold voltage V GS(th) V =V I = 1 mA 2.1 3 4 GS DS, D Zero gate voltage drain current I A DSS V = 200 V, V = 0 V, T = 25 C - 0.1 1 DS GS j V = 200 V, V = 0 V, T = 125 C - 10 100 DS GS j Gate-source leakage current I nA GSS V = 20 V, V = 0 V - 10 100 GS DS Drain-Source on-resistance R DS(on) V = 10 V, I = 13.5 A - 0.1 0.13 GS D Rev. 2.5 Page 2 2010-07-02