STH265N6F6-2AG STMicroelectronics

STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 m typ., 180 A STripFET F6 Power MOSFET in HPAK-2 and HPAK-6 packages Datasheet - production data Features Order code V R max I DS DS(on) D TAB TAB STH265N6F6-2AG 60 V 2.1 m 180 A STH265N6F6-6AG 60 V 2.1 m 180 A 7 2 3 1 Designed for automotive applications 1 Very low on-resistance Very low gate charge 2 2 High avalanche ruggedness H PAK-2 H PAK-6 Low gate drive power loss Applications Figure 1: Internal schematic diagram Switching applications D(TAB) D(TAB) Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all G(1) G(1) packages. S(2, 3) S(2, 3, 4, 5, 6, 7) 2 2 H PAK-2 H PAK-6 SC06140 HP2AK-2-6 Table 1: Device summary Order code Marking Package Packaging 2 STH265N6F6-2AG 265N6F6 H PAK-2 Tape and reel 2 STH265N6F6-6AG 265N6F6 H PAK-6 Tape and reel December 2014 DocID027032 Rev 2 1/18 www.st.com This is information on a product in full production. Contents STH265N6F6-2AG, STH265N6F6-6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Package mechanical data ............................................................... 8 3.1 H2PAK-2 mechanical data ................................................................ 9 3.2 HPAK-6 package information ......................................................... 12 4 Packaging information .................................................................. 15 5 Revision history ............................................................................ 17 2/18 DocID027032 Rev 2