STH290N4F6-2AG STMicroelectronics

STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 m typ., 180 A STripFET F6 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STH290N4F6-2AG 40 V 1.7 m 180 A 300 W STH290N4F6-6AG Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing STH290N4F6-2AG HPAK-2 290N4F6 Tape and Reel STH290N4F6-6AG HPAK-6 July 2015 DocID027971 Rev 1 1/19 www.st.com This is information on a product in full production. Contents STH290N4F6-2AG, STH290N4F6-6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 4.2 HPAK-6 package information ......................................................... 13 4.3 HPAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID027971 Rev 1