STP260N4F7 STMicroelectronics

STP260N4F7 N-channel 40 V, 1.8 m typ., 120 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R I P DS DS(on)max D TOT STP260N4F7 40 V 2.2 m 120 A 235 W Features Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Figure 1: Internal schematic diagram Switching applications D(2, TAB) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal G(1) capacitance and gate charge for faster and more efficient switching. S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packaging STP260N4F7 260N4F7 TO-220 Tube June 2016 DocID028290 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STP260N4F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information data ............................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID028290 Rev 2