X-On Electronics has gained recognition as a prominent supplier of STP270N8F7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP270N8F7 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP270N8F7 STMicroelectronics

STP270N8F7 electronic component of STMicroelectronics
STP270N8F7 STMicroelectronics
STP270N8F7 MOSFETs
STP270N8F7  Semiconductors

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See Product Specifications
Part No. STP270N8F7
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG
Datasheet: STP270N8F7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.428 ea
Line Total: USD 8.43 
Availability - 40
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
40
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 8.428
4 : USD 5.81
9 : USD 5.488

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP270N8F7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP270N8F7 and other electronic components in the MOSFETs category and beyond.

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STH270N8F7-2, STH270N8F7-6, STP270N8F7 Datasheet N-channel 80 V, 0.0017 typ., 180 A STripFET F7 Power MOSFETs in an HPAK-2, HPAK-6 and TO-220 packages TAB Features TAB 7 V R max. I Order codes DS DS(on) D 2 3 1 1 2 2 H PAK-2 H PAK-6 STH270N8F7-2 0.0021 TAB STH270N8F7-6 80 V 180 A STP270N8F7 0.0025 3 2 1 Among the lowest R on the market DS(on) TO-220 Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss D(TAB) D(2, TAB) High avalanche ruggedness G(1) G(1) Applications Switching applications S(2, 3, 4, 5, 6, 7) S(3) Description 2 2 TO-220 H PAK-2, H PAK-6 These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. H2PAK 2 6 N-CHG1DTABS234567 TO-220 N-CHG1D2TABS3 Product status links STH270N8F7-2 STH270N8F7-6 STP270N8F7 DS9394 - Rev 5 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 80 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 180 A C D (1) Drain current (continuous) at T = 100 C I 180 A D c (2) I Drain current (pulsed) 720 A DM (3) Total power dissipation at T = 25 C P 315 W TOT C (4) E Single pulse avalanche energy 1.16 J AS T Operating junction temperature range j -55 to 175 C T Storage temperature range stg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. This value is rated according to R thJC 4. Starting T =25 C, I =65 A, V =50 V j D DD Table 2. Thermal data Value Symbol Parameter Unit HPAK-2, HPAK-6 TO-220 Thermal resistance, R C/W thJC 0.48 junction-to-case Thermal resistance, (1) R 35 C/W thJB junction-to-board Thermal resistance, R 62.5 C/W thJA junction-to-ambient 1. When mounted on an 1 inch FR-4, 2 Oz copper board. DS9394 - Rev 5 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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