STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes V T R max I DS jmax DS(on) D 3 1 STB26NM60ND 2 3 D PAK 2 1 STF26NM60ND 650 V 0.175 21 A TO-220FP STP26NM60ND TAB STW26NM60ND 100% avalanche tested 3 3 2 Low input capacitance and gate charge 2 1 1 Low gate input resistance TO-220 TO-247 Extremely high dv/dt and avalanche Figure 1. Internal schematic diagram capabilities Applications % 7 Switching applications Description * These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical 6 structure, these revolutionary devices feature extremely low on-resistance and superior - V switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Packages Packaging STB26NM60ND DPAK Tape and reel STF26NM60ND TO-220FP 26NM60ND STP26NM60ND TO-220 Tube STW26NM60ND TO-247 November 2013 DocID025283 Rev 1 1/23 This is information on a product in full production. www.st.comContents STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) . 7 3 Test circuits . 10 4 Package mechanical data 11 5 Packing mechanical data 20 6 Revision history . 22 2/23 DocID025283 Rev 1