STP22NM60N STMicroelectronics

STB22NM60N, STF22NM60N, STP22NM60N Datasheet N-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB V DS 3 1 Order code R max. I DS(on) D 2 D PAK 3 T jmax. 2 1 TO-220FP TAB STB22NM60N STF22NM60N 650 V 0.22 16 A 3 2 STP22NM60N 1 TO-220 100% avalanche tested D(2, TAB) Low input capacitance and gate charge Low gate input resistance G(1) Applications Switching applications S(3) AM01475v1 noZen Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on- resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STB22NM60N STF22NM60N STP22NM60N DS6334 - Rev 5 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB22NM60N, STF22NM60N, STP22NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK TO-220 TO-220FP V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 16 16 A D C (1) I Drain current (continuous) at T = 100 C 10 10 A D C (2) (1) I Drain current (pulsed) 64 64 A DM P Total dissipation at T = 25 C 125 30 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three V 2500 V ISO leads to external heat sink (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 16 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 TO-220 TO-220FP D PAK R Thermal resistance junction-case 1 4.17 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 6 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 300 mJ AS j D AR DD DS6334 - Rev 5 page 2/25