X-On Electronics has gained recognition as a prominent supplier of STP22NM60N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP22NM60N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP22NM60N STMicroelectronics

STP22NM60N electronic component of STMicroelectronics
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Part No.STP22NM60N
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-channel 600 V 0.190ohm 16A Mdmesh
Datasheet: STP22NM60N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.927 ea
Line Total: USD 1.93 
Availability - 951
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
951
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 1.927
10 : USD 1.6339
30 : USD 1.4735
100 : USD 1.2918
500 : USD 1.2097
1000 : USD 1.1746

18
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 19
Multiples : 19
19 : USD 2.3769

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Cnhts
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Mxhts
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We are delighted to provide the STP22NM60N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP22NM60N and other electronic components in the MOSFETs category and beyond.

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STB22NM60N, STF22NM60N, STP22NM60N Datasheet N-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB V DS 3 1 Order code R max. I DS(on) D 2 D PAK 3 T jmax. 2 1 TO-220FP TAB STB22NM60N STF22NM60N 650 V 0.22 16 A 3 2 STP22NM60N 1 TO-220 100% avalanche tested D(2, TAB) Low input capacitance and gate charge Low gate input resistance G(1) Applications Switching applications S(3) AM01475v1 noZen Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on- resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STB22NM60N STF22NM60N STP22NM60N DS6334 - Rev 5 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB22NM60N, STF22NM60N, STP22NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK TO-220 TO-220FP V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 16 16 A D C (1) I Drain current (continuous) at T = 100 C 10 10 A D C (2) (1) I Drain current (pulsed) 64 64 A DM P Total dissipation at T = 25 C 125 30 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three V 2500 V ISO leads to external heat sink (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 16 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 TO-220 TO-220FP D PAK R Thermal resistance junction-case 1 4.17 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 6 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 300 mJ AS j D AR DD DS6334 - Rev 5 page 2/25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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