STP21NM60ND STMicroelectronics

STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND N-channel 600 V, 0.17 typ., 17 A FDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB V R DSS DS(on) Order codes I D T max max 3 J 3 1 2 1 STB21NM60ND 650 V 0.22 17 A 2 D PAK TO-220FP STF21NM60ND 650 V 0.22 17 A STP21NM60ND 650 V 0.22 17 A TAB STW21NM60ND 650 V 0.22 17 A Intrinsic fast-recovery body diode 3 3 2 2 1 Worldwide best R *area amongst the fast DS(on) 1 TO-220 recovery diode devices TO-247 100% avalanche tested Figure 1. Internal schematic diagram Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche % 7 RU capabilities Applications * Switching applications Description 6 These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh 0 Y technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB21NM60ND 21NM60ND DPAK Tape and reel STF21NM60ND 21NM60ND TO-220FP Tube STP21NM60ND 21NM60ND TO-220 Tube STW21NM60ND 21NM60ND TO-247 Tube March 2013 DocID13781 Rev 5 1/21 This is information on a product in full production. www.st.com 21Contents STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) . 7 3 Test circuits . 10 4 Package mechanical data 11 5 Packing mechanical data 19 6 Revision history . 21 2/21 DocID13781 Rev 5