STP23NM60ND STMicroelectronics

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND N-channel 600 V, 0.150 typ., 19.5 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB V R DSS DS(on) Order codes I 3 D T max 3 1 Jmax 2 1 STB23NM60ND DPAK TO-220FP STF23NM60ND TAB 650 V < 0.180 19.5 A STP23NM60ND STW23NM60ND 3 3 2 2 1 1 The worldwide best R * area amongst the DS(on) TO-247 fast recovery diode devices TO-220 100% avalanche tested Low input capacitance and gate charge Figure 1. Internal schematic diagram Low gate input resistance 4 High dv/dt and avalanche capabilities Applications Switching applications Description These FDmesh II Power MOSFETs with 3 - V intrinsic fast-recovery body diode are produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Oreder codes Marking Package Packaging STB23NM60ND 23NM60ND DPAK Tape and reel STF23NM60ND 23NM60ND TO-220FP STP23NM60ND 23NM60ND TO-220 Tube STW23NM60ND 23NM60ND TO-247 December 2012 Doc ID 14367 Rev 4 1/22 This is information on a product in full production. www.st.com 22Contents STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 19 6 Revision history . 21 2/22 Doc ID 14367 Rev 4